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LNF:Technology: Difference between revisions
→Focused Ion Beam - Secondary Electron Microscope (FIB-SEM)
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===Focused Ion Beam - Secondary Electron Microscope (FIB-SEM)=== | ===Focused Ion Beam - Secondary Electron Microscope (FIB-SEM)=== | ||
[[File:Foto0049.jpg|300px|thumb|right|FIB-SEM]] | [[File:Foto0049.jpg|300px|thumb|right|FIB-SEM]] | ||
This is Carl Zeiss Auriga Compact field effect SEM with an electron acceleration voltage in the range 0.5 to 30 kV and is equipped with three different detectors for secondary and backscattered electrons. The system includes an XFlash Bruker EDS detector for compositional studies. It is possible to perform local point, line scan and mapping analysis. An electron back-scattered diffraction detector (EBSD) has been recently installed for the determination of crystalline phases and orientation with a sample angle of 70º. The microscope is also equipped with an FIB gallium gun providing an acceleration voltage of 1 to 30 keV for cross-section inspection and TEM samples preparation on conductive and insulating materials. | This is Carl Zeiss Auriga Compact field effect SEM with an electron acceleration voltage in the range 0.5 to 30 kV and is equipped with three different detectors for secondary and backscattered electrons. The system includes an XFlash Bruker EDS detector for compositional studies. It is possible to perform local point, line scan and mapping analysis. An electron back-scattered diffraction detector (EBSD) has been recently installed for the determination of crystalline phases and orientation with a sample angle of 70º. The microscope is also equipped with an FIB gallium gun providing an acceleration voltage of 1 to 30 keV for cross-section inspection and TEM samples preparation on conductive and insulating materials. | ||