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TJ-II:Radiation asymmetries and potential variations: Difference between revisions
TJ-II:Radiation asymmetries and potential variations (view source)
Revision as of 09:32, 7 March 2018
, 7 March 2018→Description of required resources
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*Accessing different absolute values and regimes <math>E_{r}</math> is essential. These regimes can be roughly referred to as "high ion root <math>E_{r}</math>", "low ion root <math>E_{r}</math>" and the same for electron root conditions. 2 discharges for each regime is necessitated in order to characterize <math>E_{r}</math> at different positions over the same flux surface. | *Accessing different absolute values and regimes <math>E_{r}</math> is essential. These regimes can be roughly referred to as "high ion root <math>E_{r}</math>", "low ion root <math>E_{r}</math>" and the same for electron root conditions. 2 discharges for each regime is necessitated in order to characterize <math>E_{r}</math> at different positions over the same flux surface. | ||
*Reproducing some of these regimes in two different configurations (high-iota and standard), where changes in the the sign of <math>E_{r}^{Left}-E_{r}^{Right}</math> have been observed, is planned. | *Reproducing some of these regimes in two different configurations (high-iota and standard), where changes in the the sign of <math>E_{r}^{Left}-E_{r}^{Right}</math> have been observed, is planned. | ||
*Good stationarity of plasma parameters at the instant where the impurities are injected is required in order to extract the stationary background emissivity from that produced by the injected impurity. | *Good stationarity of plasma parameters at the instant where the impurities are injected is required in order to extract the stationary background emissivity from that produced by the injected impurity. | ||